Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter
Schematic diagram of CMOS inverter with a parasitic p–n–p–n structure.
Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter |
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Schematic diagram of CMOS inverter with a parasitic p–n–p–n structure. |
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