Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substratesr<xref rid="cpb_26_2_028101fn1" ref-type="fn">*</xref> <fn id="cpb_26_2_028101fn1"> <label>*</label> <p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402404), the High-Tech Research and Development Program of China (Grant Nos. 2013AA031401, 2015AA016902, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61674136, 61176053, 61274069, and 61435002).</p> </fn>

Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substratesr* *

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402404), the High-Tech Research and Development Program of China (Grant Nos. 2013AA031401, 2015AA016902, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61674136, 61176053, 61274069, and 61435002).

Wang Yu-Bing, Yin Wei-Hong, Han Qin^†, Yang Xiao-Hong, Ye Han, Lv Qian-Qian, Yin Dong-Dong

(color online) Temporal response of the device. Top: the falling edge of the photoresponse. The falling time is measured to be 0.74 ms. Bottom: the rising edge of the photoresponse. The rising time is measured to be 0.5 ms. Inset shows the waveform recorded in one chopping cycle.