Semipolar and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition*

Project supported by the National Natural Science Foundation of China (Grant Nos. 61204006 and 61574108) and the Fundamental Research Funds for the Central Universities, China (Grant No. 7214570101).

Xu Sheng-Rui, Zhao Ying, Jiang Ren-Yuan, Jiang Teng, Ren Ze-Yang, Zhang Jin-Cheng, Hao Yue
       

(color online) Room temperature PL measurements of and (0001) surface InGaN/GaN.