Semipolar <inline-formula> <img src="cpb_26_2_027801_eqn001.gif"/> </inline-formula> and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition<xref rid="cpb_26_2_027801fn1" ref-type="fn">*</xref> <fn id="cpb_26_2_027801fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61204006 and 61574108) and the Fundamental Research Funds for the Central Universities, China (Grant No. 7214570101).</p> </fn>

Semipolar

and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61204006 and 61574108) and the Fundamental Research Funds for the Central Universities, China (Grant No. 7214570101).

Xu Sheng-Rui^†, Zhao Ying, Jiang Ren-Yuan, Jiang Teng, Ren Ze-Yang, Zhang Jin-Cheng^‡, Hao Yue

(color online) Symmetric RSMs for (a) (0001) and (b) InGaN/GaN structures recorded at 90° rotations with respect to each other along both principal, in-plane directions. The x-ray beam is aligned parallelly to (c) , (e) for polar plane and (d) , (f) for semipolar plane.