Semipolar and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition*

Project supported by the National Natural Science Foundation of China (Grant Nos. 61204006 and 61574108) and the Fundamental Research Funds for the Central Universities, China (Grant No. 7214570101).

Xu Sheng-Rui, Zhao Ying, Jiang Ren-Yuan, Jiang Teng, Ren Ze-Yang, Zhang Jin-Cheng, Hao Yue
       

(color online) The AFM (10 μm × 10 μm) and SEM images of the InGaN grown on sapphires with different polarities: plane [(a) and (b)], (0001) plane [(c) and (d)].