Crystallization behaviors of ultrathin Al-doped HfO<sub>2</sub> amorphous films grown by atomic layer deposition

Crystallization behaviors of ultrathin Al-doped HfO₂ amorphous films grown by atomic layer deposition

Ma Xue-Li^{1, 3}, Yang Hong^{1, 3}, Xiang Jin-Juan^{1, 3}, Wang Xiao-Lei^{1, 3}, Wang Wen-Wu^{1, 3, †}, Zhang Jian-Qi², Yin Hua-Xiang^{1, 3}, Zhu Hui-Long^{1, 3}, Zhao Chao^{1, 3}

Relationship plots between SiO₂ physical thickness and EOT of MOS capacitor with dielectric film annealed at (a) 550 °C, (b) 650 °C, (c) 750 °C, respectively. The dielectric constant (represented by “K” in the above plots) is obtained from the intercept of the corresponding plot. (d) The dielectric constants versus annealing temperature for different films.