Crystallization behaviors of ultrathin Al-doped HfO<sub>2</sub> amorphous films grown by atomic layer deposition

Crystallization behaviors of ultrathin Al-doped HfO₂ amorphous films grown by atomic layer deposition

Ma Xue-Li^{1, 3}, Yang Hong^{1, 3}, Xiang Jin-Juan^{1, 3}, Wang Xiao-Lei^{1, 3}, Wang Wen-Wu^{1, 3, †}, Zhang Jian-Qi², Yin Hua-Xiang^{1, 3}, Zhu Hui-Long^{1, 3}, Zhao Chao^{1, 3}

(color online) GIXRD spectra of (a) pure HfO₂ films, (b) Al-doped HfO₂ films before and after annealed at temperatures ranging from 550 °C–750 °C. A superimposed view of GIXRD patterns showing the structure phase difference between pure HfO₂ film and Al-doped HfO₂ film (c) annealed at 650 °C and (d) annealed at 750 °C. The blue short dotted lines and gray short dash lines represent the fitting components of pure HfO₂ film and Al-doped HfO₂ film, respectively. The thickness of each film is fixed at 4 nm.