Thermal stability and electrical transport properties of Ge/Sn-codoped single crystalline β-Zn4Sb3 prepared by the Sn-flux method
Liu Hong-xia1, Deng Shu-ping1, Li De-cong2, Shen Lan-xian1, Deng Shu-kang1, †
       

(color online) Powder XRD patterns of the samples (a) and lattice parameters as a function of Ge content x (b) prepared by Sn-flux method based on the nominal stoichiometric ratios of Zn4.4Sb3GexSn3 (x = 0–0.15).