Ballistic transport and quantum interference in InSb nanowire devices
Li Sen1, Huang Guang-Yao1, Guo Jing-Kun1, Kang Ning1, †, Caroff Philippe2, 3, Xu Hong-Qi1, ‡
       

(color online) (a) Schematic diagram of the transport model of electrons in a ballistic metal–nanowire–metal device under a perpendicular magnetic field. As a result of ballistic regime, electrons get only reflected at the two interfaces. The red curve refers to the electron wave of the interference process. (b) Simulated subtracted magnetoconductance ∆G as a function of the gate voltage and the magnetic field. The results show a good qualitative agreement with the experimental measurements shown in Fig. 3(b).