Ballistic transport and quantum interference in InSb nanowire devices |
(color online) (a) Schematic diagram of the transport model of electrons in a ballistic metal–nanowire–metal device under a perpendicular magnetic field. As a result of ballistic regime, electrons get only reflected at the two interfaces. The red curve refers to the electron wave of the interference process. (b) Simulated subtracted magnetoconductance ∆G as a function of the gate voltage and the magnetic field. The results show a good qualitative agreement with the experimental measurements shown in Fig. |