On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

Lei Yong^†, Su Jing, Wu Hong-Yan, Yang Cui-Hong, Rao Wei-Feng

(color online) Ratios of I _r simulated using Eq. (1) to that simulated using Eq. (2) at 300 K, 350 K, 400 K, 450 K for reverse bias voltages up to −150 V.