On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases
Fitted dislocation-related effective local barrier height qΦ D (a) and the reverse current ideality factor α (b) as a function of temperature.
On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases |
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Fitted dislocation-related effective local barrier height qΦ D (a) and the reverse current ideality factor α (b) as a function of temperature. |
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