Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET
Wu Li-Juan †, Zhang Zhong-Jie, Song Yue, Yang Hang, Hu Li-Min, Yuan Na
       

Ron,sp, BV as functions of K and Nn+ for the HKLR LDMOS. (a) Ron,sp, BV as functions of K for the HKLR LDMOS, (b) Ron,sp, BV as functions of the Nn+ for the HKLR LDMOS.