Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET
Wu Li-Juan †, Zhang Zhong-Jie, Song Yue, Yang Hang, Hu Li-Min, Yuan Na
       

Ron,sp versus BV for the HKLR LDMOS and the conventional LDMOS. (a) BV and Ron,sp are functions of Nd, (b) BV and Ron,sp are functions of Ld.