Novel high-
K
with low specific on-resistance high voltage lateral double-diffused MOSFET
Wu Li-Juan
†
, Zhang Zhong-Jie
, Song Yue
, Yang Hang
, Hu Li-Min
, Yuan Na
Figures of merit (FOM =
BV
2
/
R
on,sp
) for HKLR, HK, and the conventional (Con) LDMOSs.