The inelastic electron tunneling spectroscopy of edge-modified graphene nanoribbon-based molecular devices
Ding Zong-Ling1, †, Sun Zhao-Qi1, Sun Jin1, Li Guang1, Meng Fan-Ming1, Wu Ming-Zai1, Ma Yong-Qing1, Cheng Long-Jiu2, Chen Xiao-Shuang3
       

The inelastic electron tunneling spectroscopy as the function of source–drain bias voltage of the H–H AC, H–H ZZ, A–D AC, and A–D ZZ systems at room temperature a.u..