Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
Zhang Shuqin, Liang Renrong †, Wang Jing, Tan Zhen, Xu Jun
       

(color online) (a) Simulated – characteristics of the HMG LTFET, showing their dependence on various work functions of the gap gate at . (b) φ 2 dependence of SS and ratio extracted from these simulated devices.