Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction

Zhang Shuqin, Liang Renrong^†, Wang Jing, Tan Zhen, Xu Jun

(color online) Energy band diagram along a horizontal cutline for SMG ( eV) and HMG LTFETs ( , eV) at , 0.6 V, and 1.5 V. The cutline is 0.5 nm below the interface between the gate oxide and the Si channel.