Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
Zhang Shuqin, Liang Renrong, Wang Jing, Tan Zhen, Xu Jun
       

(color online) Transfer characteristics of SMG and HMG LTFETs at . The latter shows the superior properties of lower off-state leakage current and steeper subthreshold slope. The inset displays the values of the point SS as a function of drain current.