Random telegraph noise on the threshold voltage of multi-level flash memory
Liao Yiming1, Ji Xiaoli1, †, Xu Yue3, Zhang Chengxu1, Guo Qiang2, Yan Feng1
       

(color online) The 3D TCAD simulation of the channel potential shift from the initial one when carriers are trapped by (a) RTN trap only; (b) RTN traps with additional fixed oxide traps. The channel surface potential near the fixed oxide trap position is largely changed. The more fixed charge in the tunneling oxide, the larger of the potential variation.