High thermal stability of diamond–cBN–B4C–Si composites
Jia Hong-Sheng1, Zhu Pin-Wen2, Ye Hao1, Zuo Bin1, E Yuan-Long1, Xu Shi-Chong1, Li Ji1, Li Hai-Bo1, ‡, Jia Xiao-Peng2, Ma Hong-An2
       

(color online) XPS analysis of the recovered diamond–cBN–B4C–Si sample. (a)–(d) XPS spectra for B 1s, C 1s, N 1s, and Si 2p core levels for the sample synthesized at 5.2 GPa/1680 K for 3 min. A combination of Gaussian and Lorentzian were used in the fitting of observed spectra. Different binding energies for each element suggest multiple bonding in the sample.