High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier
Xu Feng
1, 2
, Chen Peng
1, 2, †
, Jiang Fu-Long
1
, Liu Ya-Yun
1
, Xie Zi-Li
1
, Xiu Xiang-Qian
1
, Hua Xue-Mei
1
, Shi Yi
1
, Zhang Rong
1
, Zheng You-Liao
1
Variations of PL peak position versus excitation power.