A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer

Li Wei¹, Zheng Zhi^{2, †}, Wang Zhigang³, Li Ping¹, Fu Xiaojun², He Zhengrong², Liu Fan², Yang Feng², Xiang Fan², Liu Luncai²

3-D temperature distribution in (a) conventional P channel SOI LDMOS, and (b) NPCL P channel SOI LDMOS. ( m, m, m, m).