A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
Li Wei
1
, Zheng Zhi
2, †
, Wang Zhigang
3
, Li Ping
1
, Fu Xiaojun
2
, He Zhengrong
2
, Liu Fan
2
, Yang Feng
2
, Xiang Fan
2
, Liu Luncai
2
as a function of
of conventional and NPCL P channel SOI LDMOS (
m,
m,
m,
m).
