A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
Li Wei1, Zheng Zhi2, †, Wang Zhigang3, Li Ping1, Fu Xiaojun2, He Zhengrong2, Liu Fan2, Yang Feng2, Xiang Fan2, Liu Luncai2
       

as a function of of conventional and NPCL P channel SOI LDMOS ( m, m, m, m).