A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
Li Wei1, Zheng Zhi2, †, Wang Zhigang3, Li Ping1, Fu Xiaojun2, He Zhengrong2, Liu Fan2, Yang Feng2, Xiang Fan2, Liu Luncai2
       

(a) 1-D electric field distributions along line of conventional P channel SOI LDMOS and NPCL P channel SOI LDMOS, (b) 3-D electric field distributions in conventional P channel SOI LDMOS, and (c) 3-D electric field distributions in NPCL P channel SOI LDMOS. ( m, m, m, m.)