A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer

Li Wei¹, Zheng Zhi^{2, †}, Wang Zhigang³, Li Ping¹, Fu Xiaojun², He Zhengrong², Liu Fan², Yang Feng², Xiang Fan², Liu Luncai²

(a) Line around conventional P channel SOI LDMOS, (b) line around NPCL P channel SOI LDMOS, (c) electric field around line in panel (a), and (d) electric field around line in panel (b).