Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
Yang Ling1, 2, †, Zhou Xiao-Wei1, 2, Ma Xiao-Hua1, 2, Lv Ling1, 2, Cao Yan-Rong4, Zhang Jin-Cheng1, 3, Hao Yue1, 3
       

(color online) (a) Time-dependent normalized saturation currents and (b) time-dependent channel resistances at different-fluorine-power treatments under off-state electric stress.