Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

Yang Ling^{1, 2, †}, Zhou Xiao-Wei^{1, 2}, Ma Xiao-Hua^{1, 2}, Lv Ling^{1, 2}, Cao Yan-Rong⁴, Zhang Jin-Cheng^{1, 3}, Hao Yue^{1, 3}

(color online) (a) Time-dependent normalized saturation currents and (b) time-dependent channel resistances at different-fluorine-power treatments under off-state electric stress.