Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

Yang Ling^{1, 2, †}, Zhou Xiao-Wei^{1, 2}, Ma Xiao-Hua^{1, 2}, Lv Ling^{1, 2}, Cao Yan-Rong⁴, Zhang Jin-Cheng^{1, 3}, Hao Yue^{1, 3}

(a) Plots of transfer conductance versus gate voltage for different implant powers and (b) plots of threshold voltage and shift versus fluorine implant power.