Improved thermoelectric performance in p-type Bi0.48Sb1.52Te3 bulk material by adding MnSb2Se4

Improved thermoelectric performance in p-type Bi_0.48Sb_1.52Te₃ bulk material by adding MnSb₂Se₄

Cao Binglei^{1, 2}, Jian Jikang^{1, †}, Ge Binghui², Li Shanming², Wang Hao², Liu Jiao¹, Zhao Huaizhou^{2, ‡}

(color online) Temperature dependence of (a) the electrical resistivity ρ, (b) the Seebeck coefficient S, (d) the power factor , (e) the ZT value for Bi Sb Te samples with X mol% of MnSb Se (X = 0, 1, 2, 3, and 4), with 2 mol% of Mn Cu Sb Se , and for the nano-crystalline BiSbTe reference sample.^[10] (c) Room-temperature Hall carrier concentration ( and carrier mobility (μ) for the Bi Sb Te samples with various amount of MnSb Se (X = 0, 1, 2, 3, and 4), and the independent data for a 2 mol% Mn Cu Sb Se sample.