Improved thermoelectric performance in p-type Bi0.48Sb1.52Te3 bulk material by adding MnSb2Se4

Improved thermoelectric performance in p-type Bi_0.48Sb_1.52Te₃ bulk material by adding MnSb₂Se₄

Cao Binglei^{1, 2}, Jian Jikang^{1, †}, Ge Binghui², Li Shanming², Wang Hao², Liu Jiao¹, Zhao Huaizhou^{2, ‡}

(color online) Transmission electron microscopy (TEM) and energy dispersion x-ray spectrometry (EDX) mapping images of Bi Sb Te with 2 mol% of MnSb Se (column A) and with 2 mol% of Mn Cu Sb Se (column B), respectively. (a1) a low-magnification TEM image of the sample, with the main body as Bi Sb Te and the black spot corresponding to the second phase; (a2) a grain boundary TEM image of the sample; (a3) a HRTEM image of the sample matrix, the images on the right side of TEM graphs are the EDS mapping of areas in panel (a2). (b1, b2) low-magnification TEM images of the sample, with the main phase as Bi Sb Te and the spot corresponding to the second phase; (b3) a high-magnification TEM image of the sample; (b4) a HRTEM image of the sample matrix, with the images on the right side of the TEM images showing the EDS mapping images of the area in panel (b3).