Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

Zhang Dongli^{1, 2}, Wang Mingxiang^{1, †}, Wong Man², Kwok Hoi-Sing²

(color online) Pictures for the morphology of the Type-I sample after the MIC heat-treatment. (a) The distance between the two MIC windows is 250 m; (b) the distance between the two MIC windows is 160 m.