Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation
Sun Xiao-Yan, Zhang Yu-Ru, Li Xue-Chun, Wang You-Nian
       

(color online) N ion density (a) at the reactor center, (b) at the substrate surface, as a function of time for various pulse frequencies for a bias voltage of −2000 V and duty cycle of 40%, in an ICP nitrogen discharge sustained at a current of 16 A and 10 MHz.