Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation
(color online) Spatiotemporal distributions of the inductive power density next to the reactor symmetry axis at different bias voltages: (a) 0 V, (b) −500 V, (c) −2000 V, and (d) −4000 V, for a pulse frequency of 8 kHz and duty cycle of 40%, in an ICP nitrogen discharge sustained at a current of 16 A and 10 MHz.
