Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress
Zhang Li-Zhong, Wang Yuan†, , He Yan-Dong
       

Electron density distributions each with potential contour lines, voltage drops between two adjacent black dots are 0.019435 V, 0.0206 V, 0.0207 V, 0.0215 V, and 0.02188 V from structures (a) to (e), respectively.