Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress
Zhang Li-Zhong, Wang Yuan†, 
, He Yan-Dong
, He Yan-Dong Total current densities procured at 100ns as the intrinsic SCR stays at (a) blocked and (b) latched state under the pulse of 0.6 mA/μm and 20 mA/μm, respectively.
