Influences of annealing on structural and compositional properties of Al<sub>2</sub>O<sub>3</sub> thin films grown on 4H

Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H–SiC by atomic layer deposition

Tian Li-Xin, Zhang Feng^†,, Shen Zhan-Wei, Yan Guo-Guo, Liu Xing-Fang, Zhao Wan-Shun, Wang Lei, Sun Guo-Sheng, Zeng Yi-Ping

Narrow O 1s XPS profiles of different etching thickness from the as-deposited ((a)–(f)) and 1000 °C annealed ((g)–(l)) Al₂O₃ samples.