Influences of annealing on structural and compositional properties of Al<sub>2</sub>O<sub>3</sub> thin films grown on 4H

Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H–SiC by atomic layer deposition

Tian Li-Xin, Zhang Feng^†,, Shen Zhan-Wei, Yan Guo-Guo, Liu Xing-Fang, Zhao Wan-Shun, Wang Lei, Sun Guo-Sheng, Zeng Yi-Ping

GIXRD patterns of Al₂O₃ films annealed at temperatures ranging from 750 °C to 1050 °C for 1 min in N₂ atmosphere.