Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition
Tian Li-Xin, Zhang Feng†, , Shen Zhan-Wei, Yan Guo-Guo, Liu Xing-Fang, Zhao Wan-Shun, Wang Lei, Sun Guo-Sheng, Zeng Yi-Ping
       

Three-dimensional AFM images (1 μm × 1 μm) of (a) as-deposited Al2O3 film and after annealing at (b) 750 °C, (c) 768 °C, and (d) 1000 °C for 1 min in N2 atmosphere.