Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate
Li Shi-Yan, Zhou Xu-Liang, Kong Xiang-Ting, Li Meng-Ke, Mi Jun-Ping, Wang Meng-Qi, Pan Jiao-Qing†,
       

(a)–(c) High-resolution TEM images of the region labeled A, B, and C in Fig. 2(a). Hexagonal highly defective regions and cubic defect-free region are clearly shown in these images. (d) A higher multiplication HRTEM image of GaAs material in selected areas, labeled 3 in Fig. 3(c). In the image, a series of dashed lines were labeled to show the phase fluctuation in this region.