Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate
Li Shi-Yan, Zhou Xu-Liang, Kong Xiang-Ting, Li Meng-Ke, Mi Jun-Ping, Wang Meng-Qi, Pan Jiao-Qing†,
       

(a) An XTEM image of GaAs selective growth in V-groove trenches of Si. (b) A cross-sectional SEM image along the [-110] direction. The GaAs crystal is uniform and flawless along the extension direction of the trenches and no anti-phase boundary (APB) was observed.