Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate
Mao Wei, Fan Ju-Sheng, Du Ming†, , Zhang Jin-Feng, Zheng Xue-Feng, Wang Chong, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue
       

(a) Electric field distributions along the channel and (b) relationship between the LT, VBR as well as η for ST-FP HEMTs with different values of LT.