Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate
Mao Wei, Fan Ju-Sheng, Du Ming†, 
, Zhang Jin-Feng, Zheng Xue-Feng, Wang Chong, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue
, Zhang Jin-Feng, Zheng Xue-Feng, Wang Chong, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue Nearly optimized channel electric field distributions for the HEMT, the S-FP HEMT, and the ST-FP HEMT.
