Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer
He Yi-Tao, Qiao Ming†, , Zhang Bo
       

Hole distribution at cutline y = 3 μm during turnoff. t2, t1, and t3 denote the times when current begins to fall for the conventional TG, TGB, and DTGB-CS SOI LIGBT, respectively.