Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer
He Yi-Tao, Qiao Ming†, , Zhang Bo
       

Inductive turnoff waveforms of the DTGB-CS, TGB and conventional TG SOI LIGBT when Von = 1.1 V. All devices are optimally designed (DTGB-CS: Dt = 3.5 μm, Lg = 3.25 μm and Ncs = 4 × 1016 cm−3; TGB: Dt = 3.5 μm and Lg = 3.25 μm; conventional TG: Dt = 4.5 μm and Lg = 4.25 μm).