Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer
He Yi-Tao, Qiao Ming†, , Zhang Bo
       

Inductive turnoff waveforms of the DTGB-CS SOI LIGBT with (a) different Lg (Dt = 4.5 μm, Ncs = 4 × 1016 cm−3), (b) different Dt (Lg = 3 μm, Ncs = 4 × 1016 cm−3), and (c) different Ncs (Lg = 3.25 μm, Dt = 3.5 cm−3).