Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer
He Yi-Tao, Qiao Ming†, , Zhang Bo
       

Eoff as a function of Lg (Ncs = 4 × 1016 cm−3) and Ncs (Lg = 3.25 μm, Dt = 3.5 μm) for the DTGB-CS SOI LIGBT. All the Eoff is obtained at Von = 1.1 V