Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer
He Yi-Tao, Qiao Ming†, , Zhang Bo
       

On-state I–V curves of different structures: (a) VA from 0 V to 20 V, and (b) IA from 0 A/cm2 to 200 A/cm2. For DTGB-CS, Dt = 3.5 μm, Lg = 3.25 μm and Ncs = 4 × 1016 cm−3. For TGB, Dt = 3.5 μm and Lg = 3.25 μm. For conventional TG, Dt = 4.5 μm and Lg = 4.25 μm.