Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
Ma Han-Lu, Wang Zhong-Qiang†, 
, Xu Hai-Yang‡, , Zhang Lei, Zhao Xiao-Ning, Han Man-Shu, Ma Jian-Gang, Liu Yi-Chun
, Xu Hai-Yang‡, , Zhang Lei, Zhao Xiao-Ning, Han Man-Shu, Ma Jian-Gang, Liu Yi-Chun (a) Schematic diagram of a setup for high-speed measurement. (b) and (c) Typical switching cycle which is triggered by the setting (± 5 V/100) and resetting (−3 V/100 ns) pulses in URS and BRS modes. Here, the resistance states are read using a pulse (0.5 V/100 ns), and the resistance-state transition can be indirectly monitored by the change of output read voltages.
