Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
Ma Han-Lu, Wang Zhong-Qiang†, 
, Xu Hai-Yang‡, , Zhang Lei, Zhao Xiao-Ning, Han Man-Shu, Ma Jian-Gang, Liu Yi-Chun
, Xu Hai-Yang‡, , Zhang Lei, Zhao Xiao-Ning, Han Man-Shu, Ma Jian-Gang, Liu Yi-Chun Schematic diagrams illustrating the switching mechanism based on (a) VO filament and (b) Ag filament in the URS and BRS modes.
