Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
Ma Han-Lu, Wang Zhong-Qiang†, , Xu Hai-Yang‡, , Zhang Lei, Zhao Xiao-Ning, Han Man-Shu, Ma Jian-Gang, Liu Yi-Chun
       

Behaviors for URS and BRS coexisting in the single Ag/ZnO/Pt memory cell. (a) Typical positive and negative voltage forming processes for the memory devices. (b) The cumulative distribution of positive and negative forming voltages. (c) and (d) I–V curve of URS and BRS behaviors after negative and positive forming process.