Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
Ma Han-Lu, Wang Zhong-Qiang†, , Xu Hai-Yang‡, , Zhang Lei, Zhao Xiao-Ning, Han Man-Shu, Ma Jian-Gang, Liu Yi-Chun
       

(a) Structural diagram of the Ag/ZnO/Pt memory cell. (b) Cross-sectional SEM image of the device. (c) Typical XRD θ–2θ scan data of ZnO thin film grown on Pt (111)/Ti/SiO2/Si substrate. (d) O 1s core-level XPS spectrum of ZnO layer (open circles), which is deconvoluted into three components (solid lines).